Fds6679az чем заменить

Fds6679az чем заменить

FDS6679AZ MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FDS6679AZ

Тип транзистора: MOSFET

Максимальная рассеиваемая мощность (Pd): 2.5 W

Предельно допустимое напряжение сток-исток |Uds|: 30 V

Предельно допустимое напряжение затвор-исток |Ugs|: 25 V

Пороговое напряжение включения |Ugs(th)|: 3 V

Максимально допустимый постоянный ток стока |Id|: 13 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 68 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.0093 Ohm

Тип корпуса: SOIC

FDS6679AZ Datasheet (PDF)

..1. fds6679az.pdf Size:479K _fairchild_semi

March 2009FDS6679AZtmP-Channel PowerTrench MOSFET -30V, -13A, 9mGeneral Description FeaturesThis P-Channel MOSFET is producted using Fairchild Max rDS(on) = 9.3m at VGS = -10V, advanced PowerTrench process that has Max rDS(on) = 14.8m at VGS = -4.5V, especially tailored to minimize the on-stateresistance. Extended VGS r

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

..3. fds6679az.pdf Size:811K _cn_vbsemi

FDS6679AZwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = — 10 V — 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = — 4.5 V — 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G

7.1. fds6679.pdf Size:93K _fairchild_semi

March 2005 FDS6679 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed 13 A, 30 V. RDS(ON) = 9 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 13 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers, and battery chargers.

7.2. fds6679z.pdf Size:63K _fairchild_semi

October 2001 FDS6679Z 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed 13 A, 30 V. R = 9 m @ V = 10 V DS(ON) GSspecifically to improve the overall efficiency of DC/DC R = 13 m @ V = 4.5 V DS(ON) GSconverters using either synchronous or conventional switching PWM controllers, and battery charge

8.1. fds6670a.pdf Size:137K _fairchild_semi

June 2003FDS6670ASingle N-Channel, Logic Level, PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET is produced 13 A, 30 V. RDS(ON) = 8 m @ VGS = 10 Vusing Fairchild Semiconductors advanced RDS(ON) = 10 m @ VGS = 4.5 VPowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintain Fast switc

8.2. fds6672a.pdf Size:82K _fairchild_semi

April 2001 FDS6672A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 12.5 A, 30 V. RDS(ON) = 8 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 9.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized f

8.3. fds6675.pdf Size:199K _fairchild_semi

October 1998FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFETGeneral Description FeaturesThis P-Channel Logic Level MOSFET is produced-11 A, -30 V. RDS(ON) = 0.014 @ VGS = -10 V,using Fairchild Semiconductor's advanced PowerTrenchRDS(ON) = 0.020 @ VGS = -4.5 V.process that has been especially tailored to minimize theLow gate charge (30nC typical).on-state

8.4. fds6675bz.pdf Size:505K _fairchild_semi

March 2009FDS6675BZtmP-Channel PowerTrench MOSFET -30V, -11A, 13mGeneral Description Features Max rDS(on) = 13m at VGS = -10V, P-Channel MOSFET is producted using Fairchild Semiconductors advanced PowerTrench process that has Max rDS(on) = 21.8m at VGS = -4.5V, especially tailored to minimize the on-stateresistance. Extended VGS

8.5. fds6673az.pdf Size:130K _fairchild_semi

April 2005FDS6673AZ30 Volt P-Channel PowerTrench MOSFETFeatures General Description 14.5 A, 30 V. RDS(ON) = 7.2 m @ VGS = 10 V This P-Channel MOSFET has been designed specifically toRDS(ON) = 11 m @ VGS = 4.5 V improve the overall efficiency of DC/DC converters using eithersynchronous or conventional switching PWM controllers, and Extended VGSS range (

8.6. fds6675a.pdf Size:105K _fairchild_semi

February 2003 FDS6675A 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 11 A, 30 V RDS(ON) = 13 m @ VGS = 10 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 19 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide rang

8.7. fds6670as.pdf Size:295K _fairchild_semi

July 2010FDS6670AS30V N-Channel PowerTrench SyncFETGeneral Description FeaturesThe FDS6670AS is designed to replace a single SO-8 13.5 A, 30 V. RDS(ON) max= 9.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) max= 11.5 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Inclu

8.8. fds6673bz f085.pdf Size:600K _fairchild_semi

July 2009FDS6673BZ_F085 P-Channel PowerTrench MOSFET -30V, -14.5A, 7.8mGeneral Description FeaturesThis P-Channel MOSFET is produced using Fairchild Max rDS(on) = 7.8m, VGS = -10V, Semiconductors advanced Power Trench process that Max rDS(on) = 12m, VGS = -4.5V, been especially tailored to minimize the on-state Extended VGS range (-25V)

8.9. fds6673bz.pdf Size:226K _fairchild_semi

March 2009FDS6673BZP-Channel PowerTrench MOSFET -30V, -14.5A, 7.8mGeneral Description FeaturesThis P-Channel MOSFET is produced using Fairchild Max rDS(on) = 7.8m, VGS = -10V, Semiconductors advanced Power Trench process that Max rDS(on) = 12m, VGS = -4.5V, been especially tailored to minimize the on-state Extended VGS range (-25V) for b

8.10. fds6676as.pdf Size:841K _fairchild_semi

May 2008tmFDS6676AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6676AS is designed to replace a single SO-8 14.5 A, 30 V. RDS(ON) max= 6.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) max= 7.25 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

8.11. fds6670a.pdf Size:250K _onsemi

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

8.12. fds6675.pdf Size:282K _onsemi

FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFETGeneral Description FeaturesThis P-Channel Logic Level MOSFET is produced -11 A, -30 V. RDS(ON) = 0.014 @ VGS = -10 V,using ON Semiconductor's advanced PowerTrench RDS(ON) = 0.020 @ VGS = -4.5 V.process that has been especially tailored to minimize the Low gate charge (30nC typical).on-state resistance and yet

8.13. fds6675bz.pdf Size:447K _onsemi

FDS6675BZP-Channel PowerTrench MOSFET-30V, -11A, 13mFeaturesGeneral Description Max rDS(on) = 13m at VGS = -10V, P-Channel MOSFET is producted using ON Max rDS(on) = 21.8m at VGS = -4.5V, advanced PowerTrench process that has been especially tailored to minimize the on-state Extended VGS range (-25V) for battery application

8.14. fds6670as.pdf Size:321K _onsemi

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

8.15. fds6673bz.pdf Size:285K _onsemi

FDS6673BZP-Channel PowerTrench MOSFET -30V, -14.5A, 7.8mFeaturesGeneral Description Max rDS(on) = 7.8m, VGS = -10V, P-Channel MOSFET is produced using ON Semiconductors advanced Power Trench process that Max rDS(on) = 12m, VGS = -4.5V, been especially tailored to minimize the on-state Extended VGS range (-25V) for battery applicatio

Datasheet FDS6679AZ — Fairchild Даташит Полевой транзистор PCH 30 В 13 А 8SOIC — Даташит

Краткое содержание документа:
FDS6679AZ P-Channel PowerTrench® MOSFET
FDS6679AZ P-Channel PowerTrench® MOSFET
-30V, -13A, 9m General Description
This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.

This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
March 2009

Fds6679az чем заменить

General Description
This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Features
■ Max rDS(on) = 9.3mΩ at VGS = -10V, >■ Max rDS(on) = 14.8mΩ at VGS = -4.5V, >■ Extended VGS range (-25V) for battery applications
■ HBM ESD protection level of 6kV typical (note 3)
■ High performance trench technology for extremely low rDS(on)
■ High power and current handing capability
■ RoHS Compliant

FDS6679AZ аналог IRF7424PBF и FDS6673BZ

The FDS6679AZ is a P-channel MOSFET produced using Fairchild Semiconductor»s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance. This device is well suited for load switching applications common in portable battery packs. . High performance Trench technology for extremely low RDS (ON) . High power and current handing capability . 6kV Typical HBM ESD protection level

IRF7424PBF Обзор

**P-Channel Power MOSFET over 8A, Infineon** Infineon»s range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

FDS6673BZ Обзор

The FDS6673BZ is a P-channel MOSFET produced using Fairchild Semiconductor»s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance. It is well suited for load switching applications common in portable battery packs. . High performance Trench technology for extremely low RDS (ON) . High power and current handling capability . 6.5kV Typical HBM ESD protection level

FDS6679AZ Аналоги

образ модель Производители Название продукта Тип описание PDF сравнить FDS6673BZ
Fairchild Труба MOS Похоже вместо Функциональные характеристики согласованы, и некоторые из основных параметров согласованы, но электрические характеристики компонентов несколько отличаются Trans MOSFET P-CH 30V 14.5A 8Pin SOIC N T/R FDS6679AZ и FDS6673BZ аналог FDS6679Z
Fairchild Труба MOS Похоже вместо Функциональные характеристики согласованы, и некоторые из основных параметров согласованы, но электрические характеристики компонентов несколько отличаются Trans MOSFET P-CH 30V 13A 8Pin SOIC N T/R FDS6679AZ и FDS6679Z аналог TPS1100D
TI Труба MOS Аналогичная функция Функциональные характеристики устройства согласованы, но основные параметры противоречивы, и структура схемы может быть изменена и заменена. Если замена, пожалуйста, не забудьте прочитать документ с данными SOIC P-CH 15V 1.6A FDS6679AZ и TPS1100D аналог TPS1100DR
TI Труба MOS Аналогичная функция Функциональные характеристики устройства согласованы, но основные параметры противоречивы, и структура схемы может быть изменена и заменена. Если замена, пожалуйста, не забудьте прочитать документ с данными SOIC P-CH 15V 1.6A FDS6679AZ и TPS1100DR аналог IRF7424PBF
International Rectifier Труба MOS Аналогичная функция Функциональные характеристики устройства согласованы, но основные параметры противоречивы, и структура схемы может быть изменена и заменена. Если замена, пожалуйста, не забудьте прочитать документ с данными MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 13.5 Milliohms; ID -11A; SO-8; PD 2.5W; gFS 17S FDS6679AZ и IRF7424PBF аналог FDS6675BZ
ON Semiconductor Труба MOS Аналогичная функция Функциональные характеристики устройства согласованы, но основные параметры противоречивы, и структура схемы может быть изменена и заменена. Если замена, пожалуйста, не забудьте прочитать документ с данными Trans MOSFET P-CH 30V 11A 8Pin SOIC N T/R FDS6679AZ и FDS6675BZ аналог FDS6575
ON Semiconductor Труба MOS Аналогичная функция Функциональные характеристики устройства согласованы, но основные параметры противоречивы, и структура схемы может быть изменена и заменена. Если замена, пожалуйста, не забудьте прочитать документ с данными MOSFET Transistor, P Channel, -10A, -20V, 0.0085Ω, -4.5V, -600mV FDS6679AZ и FDS6575 аналог IRF7424.PBF

FDS6679AZ отечественный анало IRF7424PBF, FDS6673BZ: FDS6679AZ SOIC P-Channel -30V -13A 3.84nF, IRF7424PBF SOIC P-Channel -30V -11A, FDS6673BZ SO P-Channel 30V 14.5mA 6.5mohms. FDS6679AZ характеристики и его российские аналоги IRF7424PBF, FDS6673BZ: FDS6679AZ Trans MOSFET P-CH 30V 13A 8Pin SOIC N T/R, IRF7424PBF MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 13.5 Milliohms; ID -11A; SO-8; PD 2.5W; gFS 17S, FDS6673BZ Trans MOSFET P-CH 30V 14.5A 8Pin SOIC N T/R. FDS6679AZ аналоги IRF7424PBF, FDS6673BZ Корпус/Пакет: FDS6679AZ Trans MOSFET P-CH 30V 13A 8Pin SOIC N T/R, IRF7424PBF MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 13.5 Milliohms; ID -11A; SO-8; PD 2.5W; gFS 17S, FDS6673BZ Trans MOSFET P-CH 30V 14.5A 8Pin SOIC N T/R.